| 释义 |
SiGeCOCA³¹⁵¹¹¹⁺⁴BNC¹⁷³⁹⁹⁵⁺²
基本例句
n.硅锗¹⁰⁰
Finally, we also consider heterojunction junction photo transistors that contain SiGe and Si.
最后我们也讨论了由矽与矽锗组成的异质接面光电晶体。140.118.33.11
For practical purpose, in this paper, the program of calculation of blank sige for arbitrary rotating drawn Components and partial high box drawn components have been presented.
本文从实用出发，编制了任意形状的旋转体拉深件及部分高盒子拉深件的毛坯计算程序。 cnki
In this paper Compensation method of wheel sige deviation is discussed in detail.
这里还详细讨论了砂轮尺寸误差的补偿方法。 cnki
Some kinds of low- dimensional nano structures can be formed by irradiation of laser on the SiGe alloy sample.
用激光照射辅助电化学刻蚀硅锗合金样品能够形成多种低维纳米结构。 dictall
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly- SiGe, Schottky barrier diodesSBDs were fabricated.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。 cnki
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。 cnki
The meat hereditary character of Fuzhou Black Pig, Duroc, New Landrance, Sige and the cross-bred pig, altogether12 breeds or cross-breeds of86 pigs, was studied on this paper.
本文研究福州黑猪、杜洛克、斯格和新长白猪及其杂种猪共12个品种或组合86头的肌肉品质遗传特性。 cnki
The stabilization of austenite depends on the chemical stabilization, the particle sige effect and the austenite thermal stabilization.
奥氏体稳定化取决于化学稳定化、尺寸稳定化和热稳定化； cnki
The SiGe GN3S Sampler is a very powerful, very hard to use GPS receiver.
的硅锗 GN3S取样器是一个非常强大的，很难用 GPS接收机。 boboking
In this paper, a variety of low-dimensional quantum structures are formed on the SiGe alloy by the strong laser irradiation and the electrochemical etching with the weak laser irradiation assisted.
本文用强激光直接辐照和弱激光辐照辅助电化学刻蚀方法在硅锗合金薄膜上形成多种低维量子结构。 dictall
Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
现代先进的外延技术使应变层锗硅材料的应用成为可能。 cnki
Secondly, the SiGe- based BiCMOS light emitting device is used as photo detector, when a reverse bias is applied. Photo currents are measured and the photo detecting characteristics are studied.
第二部分则利用设计之矽锗基金氧半元件逆向操作，以光照产生光电流，观察其作为光侦测器的特性。140.118.33.11
Theoretical analysis proved that the transmission error can he described as a function of machining sige and assemble dimension of pin-wheel, cycloid-wheel and turn- arm etc.
理论分析证明，传动误差是针轮、摆线轮及转臂等的加工尺寸和装配尺寸的函数。 cnki
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。 dictall |