| 释义 |
AlGaInP
基本例句
铝镓铟磷¹⁰⁰
Optimum Al Composition Analysis onAlGaInPQuaternary Double Heterojunction Light-emitting Diodes;.引用该论文 陈贵楚;范广涵;陈练辉;刘鲁.
For red LEDs, theAlGaInPepitaxy layer are commonly grown on GaAs substrate for lattice constant matching requirement.对红色发光二极体而言，由于晶格常数之要求，通常将发光材料磷化铝铟镓成长于砷化镓基板上。
Application of wafer bonding inAlGaInPhigh brightness LED devices晶片键合在AlGaInP发光二极管中的应用
A novelAlGaInPthin-film light emitting diode with Omni directional reflector新型全方位反射铝镓铟磷薄膜发光二极管
Characteristics ofAlGaInPRed Laser Diode and Its Thermal Property Analysis红色AlGaInP激光器的特性及热特性分析
4 Distribution of carrier concentrations of p-GaP and p-AlGaInPinAlGaInPLED structures under differentannealing temperature measured by ECV.标题： 图4不同退火温度下AlGaInPLED外延片中p-GaP和p-AlGaInP的载流子浓度随深度分布曲线 Fig. |